Improved photoelectrochemical performance of ultra thin g-C3N4 nanosheet: A comparative study from bulk to nanoscale

Ultrathin g-C3N4 (g-CN) nanosheets are prepared by a two-step thermal exfoliation process in an air atmosphere. X-ray diffraction pattern (XRD) shows that ultrathin g-CN have the same crystal structure as of bulk with slight shift peak positions due to reduction sheet thickness. Field emission scanning electron microscope (FESEM) images show is converted into oxidation atmosphere, which increases number reactive active sites for water splitting. Due thickness g-CN, quantum confinement happened and thereby increase bandgap from 2.88 (bulk g-CN) eV 3.10 (ultrathin g-CN). Steady-state photoluminescence (PL) blue shift, time-resolve (TRPL) average lifetime photogenerated charge carrier when nanosheets. Enhancement photoelectrochemical performance observed compared increased carriers large sites.